Compact modeling of 3D vertical junctionless gate-all-around silicon nanowire transistors towards 3D logic design

Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction cha...

High performance horizontal gate-all-around silicon nanowire field-effect transistors.

Semiconducting nanowires have been pointed out as one of the most promising building blocks for submicron electrical applications. These nanometer materials open new opportunities in the area of post-planar traditional metal-oxide-semiconductor devices. Herein, we demonstrate a new technique to fabricate horizontally suspended silicon nanowires with gate-all-around field-effect transistors. We ...

Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires

An Extensive Evaluation of Futuristic Gate All Around Junctionless Nanowire MOSFET Using Numerical Simulation

This paper present an extensive review of homogeneously doped Junctionless Cylindrical Gate All Around (JL-CGAA) MOSFET using numerical simulations to look into deep physical insight of the device. The electrical and analog/RF performance has been investigated. The JL-C-GAA FET is more immune to short channel effect than the devices having p-n junctions. It also offers steeper subthreshold slop...

Metal-Gated Junctionless Nanowire Transistors

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to conventional CMOS FETs. Previous theoretical and experimental works [1][2] on JNFETs have considered polysilicon gates and silicon-dioxide dielectric. However...